Substrate processing apparatus

ABSTRACT

A substrate processing apparatus having improved uniformity and speed of reaction is provided. A substrate processing apparatus includes a body portion comprising a discharge path, a gas supply unit connected to the body portion, a first partition extending from the body portion, a second partition extending from the body portion and arranged between the gas supply unit and the first partition, and a substrate support unit configured to have surface-sealing with the first partition, wherein a first region between the first partition and the second partition and a second region between the gas supply unit and the second partition are connected to the discharge path.

CROSS-REFERENCE TO RELATED APPLICATION

This application claims the benefit of Korean Patent Application No.10-2016-0173619, filed on Dec. 19, 2016, in the Korean IntellectualProperty Office, the disclosure of which is incorporated herein in itsentirety by reference.

BACKGROUND 1. Field

One or more embodiments relate to a substrate processing apparatus, andmore particularly, to a substrate deposition apparatus having improveduniformity and speed of reaction.

2. Description of the Related Art

In a process of manufacturing a semiconductor device, as a circuit linewidth decreases, more precise process control has been required. In afilm deposition process that is one of important semiconductorprocesses, various efforts to improve uniformity and deposition speed offilm deposition have been made.

In a substrate processing process such as film deposition or filmetching using a flow of a fluid, reaction environments of a centerportion and an edge portion of a substrate to be processed are differentfrom each other. Due to the difference in the reaction environment,uniformity in the reaction of the center portion and the edge portionmatters. The issue is becoming more important as a circuit line widthdeceases.

Furthermore, in a process of forming a fine line width, it is a problemthat a reaction speed decreases to perform more precise processing. Inparticular, an atomic layer deposition process recently used toimplement a fine line width is a switching type process in which atomiclayers are deposited one by one by alternately introducing a source gasand a reactive gas in a reaction space by opening/closing of a valve.However, the atomic layer deposition process has a problem in that athroughput, for example, the number of substrates processed per hour, islow compared to a conventional deposition process.

SUMMARY

One or more embodiments include a substrate deposition apparatus whichmay have improved uniformity and speed of reaction.

Additional aspects will be set forth in part in the description whichfollows and, in part, will be apparent from the description, or may belearned by practice of the presented embodiments.

According to one or more embodiments, a substrate processing apparatusincludes a body portion including a discharge path, a gas supply unitconnected to the body portion, a first partition extending from the bodyportion, a second partition extending from the body portion and arrangedbetween the gas supply unit and the first partition, and a substratesupport unit configured to have surface-sealing with the firstpartition, wherein a first region between the first partition and thesecond partition and a second region between the gas supply unit and thesecond partition are connected to the discharge path.

A gap may be formed between the second partition and the gas supplyunit.

The body portion may further include a first discharge channelconnecting the first region between the first partition and the secondpartition and the discharge path, and a second discharge channelconnecting the second region between the gas supply unit and the secondpartition and the discharge path.

The substrate processing apparatus may further include an insulatingplate arranged on the gas supply unit, wherein the second region iscommunicated with the second discharge channel via a space between theinsulating plate and the body portion.

The second discharge channel may be formed around an edge of theinsulating plate.

The edge of the insulating plate may include a recessed surface, and thesecond region may be communicated with the second discharge channel viaa space between the recessed surface and the body portion.

A direction of a path from the second region to the second dischargechannel may be changed at least two times.

The substrate processing apparatus may further include a controller thatis configured to perform a cycle at least once, the cycle including afirst step of supplying a first gas and a second step of supplying asecond gas.

The substrate processing apparatus may further include a controller thatis configured to perform a cycle a plurality of times, the cycleincluding a first step of supplying a source gas, a second step ofpurging the source gas, a third step of supplying a reactive gas, and afourth step of purging the reactive gas.

Each of the source gas and the reactive gas may be distributed anddischarged through the first region and the second region.

The source gas and the reactive gas may be supplied by the gas supplyunit, and a changing cycle for supplying the source gas and the reactivegas may be determined based on a position of the second partitionarranged between the gas supply unit and the first partition.

During a time section of at least part of the first step to the fourthstep, a flow rate of a gas escaping from the first region through thefirst discharge channel may be less than a flow rate of a gas escapingfrom the second region through the second discharge channel.

During a time section of at least part of the first step to the fourthstep, a flow rate of a gas escaping from the first region through thefirst discharge channel may be greater than a flow rate of a gasescaping from the second region through the second discharge channel.

During a time section of at least part of the first step to the fourthstep, a flow rate of a gas supplied by the gas supply unit may besubstantially the same as a sum of a flow rate of the gas escaping fromthe first region through the first discharge channel and a flow rate ofthe gas escaping from the second region through the second dischargechannel.

A reaction space may be defined by the gas supply unit, the substratesupport unit, and the second partition.

At least part of the discharge path may overlap the gas supply unit.

According to one or more embodiments, a substrate processing apparatusincludes a first partition, a gas supply unit connected to the firstpartition, a substrate support unit configured to have surface-sealingwith the first partition, a second partition dividing a space betweenthe first partition and the gas supply unit into a first region and asecond region, and a discharge path communicated with the first regionand the second region.

According to one or more embodiments, a substrate processing apparatusincluding a body portion, a gas supply unit, a substrate support unitconfigured to form a reaction space with the body portion, and apartition extending from the body portion toward the substrate supportunit, in which the reaction space is formed by the partition between thegas supply unit and the substrate support unit, and a gap is formedbetween the partition and the gas supply unit and communicated with thereaction space.

BRIEF DESCRIPTION OF THE DRAWINGS

These and/or other aspects will become apparent and more readilyappreciated from the following description of the embodiments, taken inconjunction with the accompanying drawings in which:

FIGS. 1 and 2 are schematic cross-sectional views of substrateprocessing apparatuses according to embodiments;

FIGS. 3 and 4 are schematic cross-sectional views of substrateprocessing apparatuses according to other embodiments;

FIG. 5 is a schematic cross-sectional view of a substrate processingapparatus according to another embodiment;

FIG. 6 is a perspective view of a substrate processing apparatusaccording to another embodiment;

FIG. 7 is a cross-sectional view of the substrate processing apparatusof FIG. 6, taken along a line II-II′ of FIG. 6;

FIG. 8 is an enlarged sectional view of a portion Q of FIG. 7;

FIGS. 9 and 10 are schematic cross-sectional views of substrateprocessing apparatuses according to other embodiments;

FIG. 11 is a flowchart schematically illustrating a film depositionmethod using the substrate processing apparatuses according to otherembodiments;

FIGS. 12 and 13 are schematic cross-sectional views of substrateprocessing apparatuses according to other embodiments;

FIG. 14 is an enlarged cross-sectional view of a discharge portion ofthe substrate processing apparatus;

FIGS. 15 to 17 are schematic perspective views of reactors according toother embodiments and substrate processing apparatuses including thereactors;

FIGS. 18 and 19 schematically illustrate structures of reactorsaccording to other embodiments;

FIGS. 20 and 21 schematically illustrate structures of the back plates20 according to other embodiments;

FIGS. 22 to 24 are, respectively, a perspective view, a top view, and abottom view of a gas channel included in the gas supply unit, accordingto an embodiment;

FIGS. 25 and 26 illustrate various embodiments of a fourth through-holeand a fifth through-hole penetrating through a back plate and a gaschannel; and

FIGS. 27 and 28 are graphs showing a thickness of a SiO₂ film depositedon a substrate by a plasma-enhanced atomic layer deposition (PEALD)method in a reactor according to an embodiment.

DETAILED DESCRIPTION

Reference will now be made in detail to embodiments, examples of whichare illustrated in the accompanying drawings, wherein like referencenumerals refer to like elements throughout. In this regard, the presentembodiments may have different forms and should not be construed asbeing limited to the descriptions set forth herein. Accordingly, theembodiments are merely described below, by referring to the figures, toexplain aspects of the present description. As used herein, the term“and/or” includes any and all combinations of one or more of theassociated listed items. Expressions such as “at least one of,” whenpreceding a list of elements, modify the entire list of elements and donot modify the individual elements of the list.

Embodiments are provided to further completely explain the presentinventive concept to one of ordinary skill in the art to which thepresent inventive concept pertains. However, the present inventiveconcept is not limited thereto and it will be understood that variouschanges in form and details may be made therein without departing fromthe spirit and scope of the following claims. That is, descriptions onparticular structures or functions may be presented merely forexplaining embodiments of the present inventive concept.

Terms used in the present specification are used for explaining aspecific embodiment, not for limiting the present inventive concept.Thus, the expression of singularity in the present specificationincludes the expression of plurality unless clearly specified otherwisein context. Also, terms such as “comprise” and/or “comprising” may beconstrued to denote a certain characteristic, number, step, operation,constituent element, or a combination thereof, but may not be construedto exclude the existence of or a possibility of addition of one or moreother characteristics, numbers, steps, operations, constituent elements,or combinations thereof. As used in the present specification, the term“and/or” includes any one of listed items and all of at least onecombination of the items.

In the present specification, terms such as “first” and “second” areused herein merely to describe a variety of members, parts, areas,layers, and/or portions, but the constituent elements are not limited bythe terms. It is obvious that the members, parts, areas, layers, and/orportions are not limited by the terms. The terms are used only for thepurpose of distinguishing one constituent element from anotherconstituent element. Thus, without departing from the right scope of thepresent inventive concept, a first member, part, area, layer, or portionmay refer to a second member, part, area, layer, or portion.

Hereinafter, the embodiments of the present inventive concept aredescribed in detail with reference to the accompanying drawings. In thedrawings, the illustrated shapes may be modified according to, forexample, manufacturing technology and/or tolerance. Thus, the embodimentof the present inventive concept may not be construed to be limited to aparticular shape of a part described in the present specification andmay include a change in the shape generated during manufacturing, forexample.

FIGS. 1 and 2 are schematic cross-sectional views of substrateprocessing apparatuses according to embodiments.

Referring to FIGS. 1 and 2, each substrate processing apparatus mayinclude a body portion 110, a conduit 120, a gas supply unit 130, asubstrate support unit 140, a cover 160, and a discharge hole 170.Although an example of the substrate processing apparatus described inthe present specification may include a deposition apparatus for asemiconductor or a display substrate, the present disclosure is notlimited thereto. The substrate processing apparatus may be any apparatusneeded to perform deposition of a material for forming a film, or mayrefer to an apparatus for uniformly supplying a source material foretching or polishing of a material. In the following description, forconvenience of explanation, it is assumed that a substrate processingapparatus is a semiconductor deposition apparatus.

The body portion 110 may include a discharge path 115, a first partitionW1, and a second partition W2. The discharge path 115 may be formed inthe body portion 110 and may be connected to the discharge hole 170. Thefirst partition W1 may extend from the body portion 110 protrudingtoward the substrate support unit 140. The second partition W2 may bearranged between the gas supply unit 130 and the first partition W1, andlike the first partition W1, may extend from the body portion 110protruding toward the substrate support unit 140.

The conduit 120 may be a gas supply channel of the substrate processingapparatus. The conduit 120 may be connected to the gas supply unit 130by penetrating through at least part, for example, the center portion,of the body portion 110. When a deposition apparatus is an atomic layerdeposition apparatus, a source gas, a purge gas, and/or a reaction gasmay be supplied through the conduit 120. When the deposition apparatusis a pulsed chemical vapor deposition apparatus, reaction gases suppliedthrough the conduit 120 may be gases that are mutually reactive.

The gas supply unit 130 may be connected to the body portion 110. Forexample, the gas supply unit 130 may be arranged in the body portion110. In detail, the gas supply unit 130 may be fixed to the body portion110 by a fixing member (not shown). The gas supply unit 130 may beconfigured to supply a gas to a target subject S in a reaction space150. For example, the gas supply unit 130 may be a showerhead assemblyconfigured to uniformly supply a gas. A first region S1 between thefirst partition W1 and the second partition W2 and a second region S2between the gas supply unit 130 and the second partition W2 may beconnected to the discharge path 115 of the body portion 110.

The gas supply unit 130 may include a conductive body and may be used asan electrode to generate plasma. For example, as the gas supply unit 130is connected to a radio frequency (RF) rod (not shown), the gas supplyunit 130 may function as an electrode to generate plasma.

The substrate support unit 140 may be configured to provide an area inwhich the target subject S such as a semiconductor or display substrateis accommodated. Furthermore, the substrate support unit 140 may beconfigured to contact a lower surface of the first partition W1. Forexample, the substrate support unit 140 may be supported by a supportportion (not shown) capable of performing vertical and rotationalmotions. As the substrate support unit 140 is separated from the firstpartition W1 or in contact with the first partition W1 by the motions ofthe support portion, the reaction space 150 may be opened or closed.Furthermore, the substrate support unit 140 may be a conductive body andmay be used as an electrode to generate plasma, that is, a counterelectrode of a gas supply electrode.

A first discharge channel E1 and a second discharge channel E2 may beformed in the body portion 110. The first discharge channel E1 mayconnect the first region S1 between the first partition W1 and thesecond partition W2 to the discharge path 115. The second dischargechannel E2 may connect the second region S2 between the gas supply unit130 and the second partition W2 to the discharge path 115. At least partof the first discharge channel E1 and/or the second discharge channel E2may be formed in a form of a through-hole (see FIG. 12).

The second partition W2 arranged between the gas supply unit 130 and thefirst partition W1 may provide the reaction space 150 for processing,for example, deposition, etching, or polishing, of a substrate. Theactual size of the reaction space 150 may be reduced due to theconfiguration of the second partition W2, that is, the configuration ofdividing a space between the first partition W1 and the gas supply unit130 into the first region S1 and the second region S2.

The reduction of the size of the reaction space 150 may be clearlyunderstood by the comparison with the substrate processing apparatus ofFIG. 2. When compared to the substrate processing apparatus of FIG. 2 inwhich only the first partition W1 is formed, in the substrate processingapparatus of FIG. 1, the second partition W2 is additionally arrangedbetween the gas supply unit 130 and the first partition W1, and thus thesize of the reaction space 150 is reduced.

A deposition reaction speed may be improved through the reduction of thesize the reaction space 150. In processes using various types of gases,for example, an ALD process, a pulsed CVD process, etc., to form a filmof one type, a changing speed of the gases is dependent on the size ofthe reaction space 150. In other words, as the reaction space 150decreases, the volume of a related gas to fill the reaction space 150decreases. Accordingly, the changing speed between the gases, that is, achanging speed such as switching to control supply of a gas, may befaster and the number of substrates processed per unit time(productivity) may be improved. Furthermore, unnecessary reaction spacemay be reduced and the amount of residual gas after processing may bereduced, thereby enabling efficient process and substrate processing.

The gas of the reaction space 150 may be discharged to the dischargepath 115 via a gap G between the second partition W2 and the gas supplyunit 130 through the first discharge channel E1. The gap G may be formedas the second partition W2 maintained a non-contact state with thesubstrate support unit 140, that is, the second partition W2 does notcontact the substrate support unit 140. The discharge through the gap Gmay prevent generation of a vortex of the gas, for example, the sourcegas, the reactive gas, etc., which may be formed at an edge of thereaction space 150. Accordingly, uniformity of reaction, for example,deposition, at an edge of the substrate may be improved (see FIG. 5).

The second discharge channel E2 may discharge the gas in the secondregion S2 between the gas supply unit 130 and the second partition W2 tothe discharge path 115. Accordingly, the gas confined to a dead volumebeside the gas supply unit 130, that is, a residual gas in the secondregion S2, may be discharged.

The flow rate of the gas supplied by the gas supply unit 130 may besubstantially the same as a sum of a flow rate of the gas dischargedfrom the first region S1 to the discharge path 115 through the firstdischarge channel E1 and a flow rate of the gas discharged from thesecond region S2 to the discharge path 115 through the second dischargechannel E2. Accordingly, by adjusting a ratio of the size, for example,a diameter, of the first discharge channel E1 and the second dischargechannel E2, discharge efficiency around the edge of the substrate may becontrolled. Furthermore, by adjusting the size of the gap, dischargeefficiency and film uniformity may be controlled.

FIGS. 3 and 4 are schematic cross-sectional views of substrateprocessing apparatuses according to other embodiments. The substrateprocessing apparatus according to the present embodiment may be modifiedexamples of the substrate processing apparatuses according to theabove-described embodiments. Redundant descriptions between theembodiments are omitted in the following description.

Referring to FIG. 3, the second discharge channel E2 may be formedaround an edge of the gas supply unit 130. For example, a recessedsurface may be formed at the edge of the gas supply unit 130, and thesecond discharge channel E2 may be formed in the recessed surface of thegas supply unit 130.

The recessed surface is introduced to further reduce the size of thereaction space 150. The second region S2 between the gas supply unit 130and the second partition W2 may be communicated to the second dischargechannel E2 via the space between the recessed surface and the bodyportion 110. The direction of a path P from the second region S2 to thesecond discharge channel E2 may be changed at least two times due to theabove communication structure.

Referring to FIG. 4, the substrate processing apparatus may furtherinclude an insulating plate 180 arranged on the gas supply unit 130. Theinsulating plate 180 may be arranged on the gas supply unit 130. In anembodiment, the insulating plate 180 may be arranged between the bodyportion 110 and the gas supply unit 130.

The second discharge channel E2 may be formed around an edge of theinsulating plate 180. For example, a recessed surface may be formed atthe edge of the insulating plate 180, and the second discharge channelE2 may be formed on the recessed surface of the insulating plate 180.

The second region S2 between the gas supply unit 130 and the secondpartition W2 may be communicated with the second discharge channel E2via the space between the recessed surface of the insulating plate 180and the body portion 110. The direction of a path P from the secondregion S2 to the second discharge channel E2 may be changed at least twotimes due to the above communication structure.

As illustrated in FIGS. 3 and 4, the size of the reaction space 150 maybe further reduced by the gas supply unit 130 or the recessed surface ofthe insulating plate 180.

Furthermore, the recessed surface may facilitate processing of the bodyportion 110. For example, when the second discharge channel E2 is formedwithout the recessed surface, a distance between the first dischargechannel E1 and the second discharge channel E2 may be identical to athickness D1 of the second partition W2.

In contrast, as the communication structure through the recessed surfaceis implemented, the distance between the first discharge channel E1 andthe second discharge channel E2 may be increased from D1 to D2.Accordingly, mechanical stability for processing of the body portion 110may be improved. In other words, in performing a mechanical processingprocess to form the first discharge channel E1 and the second dischargechannel E2, a thickness of D2-D1 may be further secured, and thusmechanical deformation that may occur during processing of the partitionmay be prevented. As such, the discharge structure using the recessedsurface, that is, the structure of changing the direction of a dischargepath from the second region S2 to the second discharge channel E2 atleast two times, may have technical effects of not only reducing thesize of the reaction space 150, but also improving stability ofmechanical processing.

In some embodiments, at least part of the discharge path 115 may overlapthe gas supply unit 130. In other words, the discharge path 115 mayextend in a lateral direction so that the direction of a discharge pathof the second discharge channel E2 is changed according to the recessedsurface and extends in a vertical direction to be connected to thedischarge path 115. Accordingly, the gas supply unit 130, the seconddischarge channel E2 on the gas supply unit 130, and the discharge path115 may overlap one another in the vertical direction.

For example, as illustrated in FIGS. 3 and 4, the recessed surface maybe formed at the edge of the gas supply unit 130 or the insulating plate180, and the second discharge channel E2 may be formed by the recessedsurface. In this case, the discharge path 115 connected to the seconddischarge channel E2 may be arranged such that a relative position ofthe discharge path 115 may vertically overlap the gas supply unit 130.

Although FIGS. 3 and 4 illustrate the gas supply unit 130 and theinsulating plate 180 as separate elements, the gas supply unit 130 maybe configured to include the insulating plate 180. In other words, theinsulating plate 180 may be implemented as a partial element of the gassupply unit 130. Accordingly, in the embodiment of FIG. 3, the recessedsurface formed at the edge of the gas supply unit 130 may be interpretedto be the recessed surface of the insulating plate 180 included in thegas supply unit 130.

FIG. 5 is a schematic cross-sectional view of a substrate processingapparatus according to an embodiment. The substrate processing apparatusaccording to the present embodiment may be modified examples of thesubstrate processing apparatuses according to the above-describedembodiments. Redundant descriptions between the embodiments are omittedin the following description.

Referring to FIG. 5, the substrate support unit 140 may be configured toform the reaction space 150 with the body portion 110. A partition W mayprotrude from the body portion 110 to extend toward the substratesupport unit 140. The reaction space 150 may be formed between the gassupply unit 130 and the substrate support unit 140 due to the partitionstructure.

The gap G communicating with the reaction space 150 may be formedbetween the partition W and the substrate support unit 140. The gapstructure may prevent a vortex phenomenon of a gas that may occur at anedge of the reaction space 150.

When the gap is not formed between the partition W and the substratesupport unit 140, a speed of a gas F1 ascending close to the partition Wdecreases due to resistance of the partition W. In detail, the gas F1ascending close to the partition W may have a speed that is relativelyless than the speed of a gas F2 moving away from the partition W. Thespeed difference causes a density difference between the gases F1 and F2(and a pressure difference according thereto). The pressure differencemay generate a vortex of the gas.

In contrast, according to the embodiments of the present inventiveconcept, as the gap G is formed between the partition W and thesubstrate support unit 140, the vortex phenomenon may be prevented orreduced. In other words, the vortex phenomenon may be reduced as a gasF1′ close to the partition W escapes through the gap G instead ofascending along the partition W. As a result, uniformity of depositionat the edge of substrate S may be improved.

FIG. 6 is a perspective view of a substrate processing apparatus 100according to another embodiment. FIG. 7 is a cross-sectional view of thesubstrate processing apparatus 100 of FIG. 6, taken along a line II-II′of FIG. 6. FIG. 8 is an enlarged sectional view of a portion Q of FIG.7.

The substrate processing apparatus 100 according to the presentembodiment may be modified examples of the substrate processingapparatuses according to the above-described embodiments. Redundantdescriptions between the embodiments are omitted in the followingdescription.

Referring to FIGS. 6 to 8, the substrate processing apparatus 100 mayinclude the substrate support unit 140, the body portion 110 arranged onthe substrate support unit 140, the gas supply unit 130 mounted on aninner circumferential surface of the body portion 110, a support member270 arranged between the gas supply unit 130 and the body portion 110,and a gas supply portion 240 supplying a process gas to the gas supplyunit 130.

The substrate support unit 140 may support a substrate and may have amain surface on which the substrate is accommodated. The substratesupport unit 140 may be, for example, a susceptor. In some embodiments,the substrate support unit 140 may be configured to be able to rotateand/or move by being connected to a moving portion 250 provided at oneside of the substrate support unit 140.

At least one hole 155 that perpendicularly penetrates through the mainsurface of the substrate support unit 140 may be formed in the substratesupport unit 140. The hole 155 may accommodate at least one lift pin.

The body portion 110 may be arranged on the main surface of thesubstrate support unit 140 and may have a hollow portion 113 with anexposed upper portion.

An opening is formed in each of an upper surface and a lower surface ofthe body portion 110, the hollow portion 113 may extend between theopenings of the upper surface and the lower surface. In other words, thebody portion 110 may have a shape in which the interior of the bodyportion 110 is exposed to the outside through the openings of the upperand lower surfaces of the body portion 110. However, a lower portion ofthe hollow portion 113 may be closed by the substrate support unit 140.

The hollow portion 113 may be divided into an upper space 113 b and alower space 113 a by the gas supply unit 130. The upper space 113 b maysignify a space between the opening of the upper surface of the bodyportion 110 and the gas supply unit 130. The lower space 113 a maysignify a space between the gas supply unit 130 and the substratesupport unit 140. The lower space 113 a may be provided as a reactionspace in which a deposition process is performed on a substrate placedon the substrate support unit 140.

The reaction space is an area surrounded by the gas supply unit 130, thesubstrate support unit 140, and the body portion 110, which signifies aspace in which a thin film is formed on a substrate through a chemicalreaction of a gas supplied through the gas supply unit 130.

The discharge path 115 extending from the lower space 113 a toward thedischarge hole 170 provided in the upper portion of the body portion 110may be formed in a wall of the body portion 110. In other words, adischarge gas generated in the lower space 113 a during a depositionprocess may be discharged to the discharge hole 170 through thedischarge path 115. In other words, the substrate processing apparatus100 may have an upward discharge structure.

The discharge channel E1 extending from the lower space 113 a toward thedischarge hole 170 provided in the upper portion of the body portion110, and the discharge path 115, may be formed in the partition of thebody portion 110. In other words, the discharge gas generated in thelower space 113 a during the deposition process may be discharged to thedischarge hole 170 via the discharge channel E1 and the discharge path115.

The gap G may be formed between the body portion 110 and the substratesupport unit 140. The gap G may spatially connect the lower space 113 athat is a reaction area and the discharge channel E1. As describedabove, as the gap G is formed, a vortex phenomenon that may be generateddue to a pressure difference between a gas close to the partition and agas away from the partition may be reduced.

The gas supply unit 130 may be provided in an inner circumference of thebody portion 110 and spaced apart from the substrate support unit 140with the lower space 113 a interposed therebetween. The gas supply unit130 supplies a process gas toward the lower space 113 a through aplurality of gas nozzle penetrating through the gas supply unit 130, andmay generate plasma in the lower space 113 a by receiving an RF power.

For example, the gas supply unit 130 may include a back plate 132 and ashowerhead electrode 131 coupled to the back plate 132. A gas supplychannel 246 extending from the gas supply portion 240 is formed in theback plate 132. A plurality of nozzles penetrating through one surfaceand the other surface of the showerhead electrode 131 facing each othermay be formed in the showerhead electrode 131. The process gas flowingfrom a gas inlet 245 of the gas supply portion 240 may pass to theshowerhead electrode 131 via the gas supply channel 246. The process gasmay be supplied to the lower space 113 a through the nozzles of theshowerhead electrode 131.

The showerhead electrode 131 may be connected to an RF connector 182 forsupplying RF power from a power supply unit disposed above.

The showerhead electrode 131 may include a metal containing material,for example, aluminum (Al). The back plate 132 may include an insulatingbody, for example, ceramic.

The gas supply portion 240 may include a gas inlet tube 241 where thegas inlet 245 is formed and a flange portion 242 arranged between thegas inlet tube 241 and the gas supply unit 130. The flange portion 242may be an insulating body.

The gas inlet 245 formed in the gas inlet tube 241 may be provided inplurality. In particular, in a process such as an atomic layerdeposition process in which mixing of process gases is prohibited, thenumber of the gas inlets 245 may be determined according to the numberof process gases. However, for gases that are not reactive with oneanother without a process gas exciting means such as plasma, the gasesmay be supplied through the same gas inlet 245.

In some embodiments, the body portion 110 may include a support step 218that inwardly protrudes along an inner circumferential surface of thebody portion 110. The gas supply unit 130 may be supported by thesupport member 270 arranged on the support step 218. In other words, alower side of the support member 270 contacts the support step 218 ofthe body portion 110, and an upper side of the support member 270 maycontact the gas supply unit 130. The partition of the body portion 110and the showerhead electrode 131 of the gas supply unit 130 may beconnected to each other by the support member 270.

The support member 270 may extend along the inner circumferentialsurface of the body portion 110. The lower space 113 a may be blockedfrom the outside by the support member 270. Furthermore, the gas supplyunit 130 may be arranged on the support member 270 without directlycontacting the body portion 110 and spaced apart from the body portion110.

In some embodiments, a sealing member 280 may be used to efficientlyseparate the lower space 113 a from the upper space 113 b. An O-ring maybe used as the sealing member 280, but the present disclosure is notlimited thereto.

The sealing member 280 may be arranged, for example, at a portion wherethe support member 270 and the support step 218 of a chamber contacteach other and at a portion where the support member 270 and the gassupply unit 130 contact each other. In detail, the sealing member 280arranged between the support member 270 and the support step 218 andbetween the support member 270 and the gas supply unit 130 may preventthe reactive gas of the lower space 113 a from leaking to the upperspace 113 b.

FIGS. 9 and 10 are schematic cross-sectional views of substrateprocessing apparatuses according to other embodiments. The substrateprocessing apparatuses of FIGS. 9 and 10 may be modified examples of thesubstrate processing apparatuses according to the embodiments of FIGS. 7and 8. Redundant descriptions between the embodiments are omitted in thefollowing description.

Referring to FIGS. 9 and 10, the body portion 110 having the dischargepath 115 formed inside may be connected to the gas supply unit 130. Indetail, the body portion 110 may be connected to the gas supply unit 130via the sealing member 280.

The first partition W1 may extend from the body portion 110 and thesubstrate support unit 140 may have surface-sealing with the firstpartition W1. The second partition W2 may extend from the body portion110 like the first partition W1, and may be arranged between the gassupply unit 130 and the first partition W1.

The first region S1 between the first partition W1 and the secondpartition W2 and the second region S2 between the gas supply unit 130and the second partition W2 may be connected to the discharge path 115of the body portion 110. In detail, the first region S1 between thefirst partition W1 and the second partition W2 may be communicated withthe first discharge channel E1 connected to the discharge path 115.Furthermore, the second region S2 between the gas supply unit 130 andthe second partition W2 may be communicated with the second dischargechannel E2 connected to the discharge path 115. Furthermore, a gap maybe formed between the second partition W2 and the gas supply unit 130.

FIG. 11 is a flowchart schematically illustrating a film depositionmethod (plasma atomic layer deposition method) using the substrateprocessing apparatuses according to other embodiments. The filmdeposition method according to the present embodiment may be performedby using the substrate processing apparatus illustrated in FIGS. 1 to10. In other words, a controller included in the substrate processingapparatus may be configured to perform a film deposition method that isdescribed later. Redundant descriptions between the embodiments areomitted in the following description.

Referring to FIGS. 1 to 10 and FIG. 11, the controller may be configuredto supply two types of source gases through the gas supply unit 130.Furthermore, the controller may be configured to supply or apply plasmato the reaction space 113 a or 150. The source gases and the plasma maybe supplied alternately and/or in a pulse form. Furthermore, at leastpart of the gases may be continuously supplied during the depositionprocess.

For example, as a first gas is supplied to the reaction space 113 a or150 for a time from t0 to t1, the first gas is chemisorbed on asubstrate. Then, the supply of the first gas is stopped for a time fromt1 to t2 and a purge gas is supplied to the reaction space 113 a or 150and thus the first gas remaining in the reaction space 113 a or 150 isdischarged to the outside of the reactor. A second gas is supplied tothe reaction space 113 a or 150 for a time from t2 to t3. A thin filmlayer is formed as the second gas performs chemical reaction with thefirst gas that is chemisorbed on the substrate.

To form the thin film layer at low temperature, that is, to enable achemical reaction at low temperature, plasma is supplied or applied fora time from t2 to t3. To this end, RF power may be applied to the gassupply unit 130. Then, the supply of the second gas is stopped for atime from t3 to t4 and the purge gas is supplied again, and thus theremaining second gas is removed from the reactor. Although in theembodiment of FIG. 11 plasma is supplied or applied during the supply ofthe second gas, the plasma may be supplied or applied in synchronismwith the supply of the first gas.

The one time process of forming a unit thin film is defined as a cycle.In other words, a time from t0 to t4 illustrated in FIG. 11 is definedas one cycle (1 cycle) and the cycle is repeated several times and thusa thin film of a desired thickness may be formed.

The discharge during the atomic layer deposition process may beperformed by the following sequence.

-   -   Gas discharge for a first step (t0-t1) of supplying a source gas        A (which may include a carrier gas)    -   Gas discharge for a second step (t1-t2) of purging the source        gas A by supplying a purge gas    -   Gas discharge for a third step (t2-t3) of supplying a source gas        B    -   Gas discharge for a fourth step (t3-t4) of purging the source        gas B by supplying a purge gas

The source gases A and B and/or the purge gas may be supplied to thereaction space 113 a or 150 through the gas supply unit 130 during thefirst step to the fourth step. In some embodiments, these gases may bedistributed and discharged through the first region S1 between the firstpartition W1 and the second partition W2 and the second region S2between the gas supply unit 130 and the second partition W2.

A changing cycle for supplying the source gas A and the source gas B maybe determined based on the position of the second partition W2.Furthermore, the changing cycle may be determined based on the size ofthe gap G between the second partition W2 and the gas supply unit 130.Furthermore, the changing cycle between the source gas and the purge gasmay be determined by the above structures.

For example, as the second partition W2 is arranged closer to the gassupply unit 130, the changing cycle for the supply of the source gas (orpurge gas) may be shortened. Furthermore, as the size of the gap Gbetween the second partition W2 and the substrate support unit 140decreases, the changing cycle for the supply of the source gas (or purgegas) may be increased.

In some embodiments, during a time section of at least part of the firststep to the fourth step, a flow rate of a gas escaping from the firstregion S1 through the first discharge channel E1 may be less than a flowrate of a gas escaping from the second region S2 through the seconddischarge channel E2. For example, a sectional area of the firstdischarge channel E1 may be smaller than a sectional area of the seconddischarge channel E2, and thus a flow rate of the gas escaping throughthe first discharge channel E1 may be less than a flow rate of the gasescaping through the second discharge channel E2.

Furthermore, during a time section of at least part of the first step tothe fourth step, the flow rate of the gas escaping from the first regionS1 through the first discharge channel E1 may be greater than the flowrate of the gas escaping from the second region S2 through the seconddischarge channel E2. In particular, at a changing point from one stepto another step, when the gas remaining in the reaction area isdischarged with a newly supplied gas through the first discharge channelE1, a flow rate of the gas escaping through the first discharge channelE1, that is, a sum of a flow rate of the gas remaining in the reactionarea and a flow rate of the newly supplied, may be greater than a flowrate of a gas escaping from the second region S2 through the seconddischarge channel E2 (flow rate of the newly supplied gas).

Although the technical concept of the present inventive concept isdescribed in the drawings and the detailed description based on theatomic layer deposition process, the technical concept may be applied toa chemical vapor deposition process. In other words, according to thetechnical concept of the present inventive concept, each of the firstgas and the second gas is distributed and discharged though twodischarge channels, and the technical concept may be applied to theatomic layer deposition process in which a cycle including a first stepof supplying the first gas and a second step of supplying the second gasthat is not reactive with the first gas is performed at least once, orapplied to a chemical vapor deposition process, in particular, a pulsedchemical vapor deposition process, in which a cycle including a firststep of supplying the first gas and a second step of supplying thesecond gas that is reactive with the first gas is performed at leastonce.

FIGS. 12 and 13 are schematic cross-sectional views of substrateprocessing apparatuses according to other embodiments. The substrateprocessing apparatus according to the present embodiment may be modifiedexamples of the substrate processing apparatuses according to theabove-described embodiments. Redundant descriptions between theembodiments are omitted in the following description.

Referring to FIG. 12, in a reactor 1, a reaction space 18 is formed as areactor wall 2 and a susceptor 25 perform face-contact and face-sealingwith each other. A substrate is mounted on the susceptor 25 and a lowerportion of the susceptor 25 is connected to a device (not shown) capableof ascending/descending to load/unload the substrate.

An inner space of the reactor wall 2 may be divided by a first partition5 into a first region 3 and a second region 4. The first region 3 andthe second region 4 respectively correspond to an upper region and alower region of the reactor 1. The first region 3 may be divided by asecond partition 6 into a third region 8 and a fourth region 13.

Furthermore, the first region 3 may be divided by a third partition 7into the fourth region 13 and a fifth region 14 In other words, as thethird partition 7 is arranged between the reactor wall 2 and the secondpartition 6, the fourth region 13 and the fifth region 14 may be formed.

A first through-hole 9 may be formed in the third region 8. The firstthrough-hole 9 penetrates through the first partition 5 and connects thethird region 8 that is an upper space of the reactor 1 and the secondregion 4 that is a lower space of the reactor 1. A first step 15 isformed between the first through-hole 9 and the third region 8.

A sixth region 17 is formed between the second region 4 and the firstpartition 5. The width of the first through-hole 9 penetrating throughthe third region 8 gradually increases toward the sixth region 17. Aspace of the first through-hole 9 that increases toward the sixth region17 may be filled with external air. The external air serves as aninsulator during a plasma process, and thus generation of parasiticplasma in the space may be prevented. Furthermore, the sixth region 17may further include a fourth partition 19, and the fourth partition 19may support a back plate 20.

A gas inlet portion is inserted in the first through-hole 9. The gasinlet portion may include a first gas inlet 6 and a flange 27, and mayfurther include a first gas supply channel 28 penetrating through theinside of the gas inlet portion. The first gas supply channel 28penetrates through the first gas inlet 6 and the flange 27 and extendsto the second region 4. A sealing member such as an O-ring may beinserted in a coupling surface between the first gas inlet 6 and theflange 27, and thus the first gas supply channel 28 may be isolated fromthe external air. A first gas supply path 29 and a second gas supplypath 30 are connected to the first gas inlet 26 to supply a gas used forprocessing a substrate. For example, a source gas, a reactive gas, and apurge gas used for an atomic layer deposition process are supplied tothe reaction space 18 via the first gas supply path 29, the second gassupply path 30, and the first gas supply channel 28. The flange 27 maybe formed of an insulator and may prevent leakage of plasma power duringthe plasma process.

The reactor 1 may further include a second through-hole 10 thatpenetrates through one surface of the third partition 7. The secondthrough-hole 10 is connected to the second region 4 by sequentiallypenetrating through the third partition 7 and the first partition 5. Anupper portion of the second through-hole 10 is coupled to a second gasinlet 31. A sealing member such as an O-ring is inserted in a couplingsurface between the second through-hole 10 and the second gas inlet 31,and thus intrusion of the external air may be prevented. The source gas,the reactive gas, or the purge gas may be supplied through the secondgas inlet 31 and the second through-hole 10. As described above, thesecond through-hole 10 may be plurally provided.

The back plate 20, a gas channel 21, and a gas supply plate 22 may besequentially arranged between the first partition 5 and the reactionspace 18. The gas supply plate 22 and the gas channel 21 may be coupledby using a coupling member. The gas channel 21 and the first partition 5may be coupled by using another coupling member.

For example, the gas channel 21 and the first partition 5 may be coupledthrough the back plate 20. As a result, the back plate 20, the gaschannel 21, and the gas supply plate 22 may be sequentially stackedabove the fourth partition 19 protruding from the first partition 5. Thegas supply plate 22 may include a plurality of holes for supplying a gasto a substrate (not shown) in the reaction space 18. For example, a gassupply unit including the gas channel 21 and the gas supply plate 22 maybe a showerhead, and in another example, the gas supply unit may be adevice for uniformly supplying a material for etching or polishing anobject.

A gas flow channel 24 is formed between the gas channel 21 and the gassupply plate 22. A gas supplied through the first gas supply channel 28may be uniformly supplied to the gas supply plate 22. A width of the gasflow channel 24 may gradually decrease from a center portion toward aperipheral portion thereof.

A third through-hole 23 may be formed in the back plate 20 and onesurface of the gas channel 21. A second step 16 may be formed betweenthe back plate 20, the gas channel 21, and the third through-hole 23.According to the present inventive concept, the third through-hole 23may penetrate through center portions of the back plate 20 and the gaschannel 21, and the flange 27 of the gas inlet portion may be insertedin the first step 15 and to the second step 16.

A sealing member such as an O-ring may be inserted between the flange 27and the second step 16, between the first partition 5 and the back plate20, and/or between the back plate 20 and the gas channel 21.Accordingly, isolation from the external air may be obtained.

The reactor 1 may further include a fourth through-hole 11 penetratingthrough one surface of the back plate 20, and a fifth through-hole 12penetrating through one surface of the gas channel 21. The fourththrough-hole 11 and the fifth through-hole 12 may be connected to thesecond through-hole 10. Accordingly, the gas supplied through the secondthrough-hole 10 is supplied to the gas flow channel 24.

The fifth through-hole 12 may penetrate through the gas supply plate 22in a perpendicular direction, or may penetrate through the gas channel21 in an inclined direction as illustrated in FIG. 12. Furthermore, thepenetration direction may lead toward the inside of the gas flow channel24 or the outside thereof. Furthermore, the fifth through-hole 12 may bearranged between the center and the edge of the gas flow channel 24, orarranged spaced apart from the edge. Alternatively, the position of thefifth through-hole 12 may be determined to correspond to the position ofa patterned structure having a large specific surface area of thesubstrate to be processed.

The fourth through-hole 11 and/or the fifth through-hole 12 may bespaced apart a certain distance from the center portions of the backplate 20 and the gas channel 21 and may form a plurality ofthrough-holes in a horizontal direction. Alternatively, the fourththrough-hole 11 and/or the fifth through-hole 12 may form a plurality ofthrough-holes in a vertical direction while mainlining a certaindistance toward the center portions of the back plate 20 and the gaschannel 21. In the fourth through-hole 11 and/or the fifth through-hole12, the interval between the through-holes may be adjusted according toa desired process.

A buffer space 38 may be further formed between the second through-hole10 and the fourth through-hole 11. The buffer space 38 may retain thegas supplied through the second through-hole 10 so to be uniformlysupplied to the fourth through-hole 11. In some embodiments, the bufferspace 38 may be formed between the fourth through-hole 11 and the fifththrough-hole 12.

A first discharge portion 32 is formed in the reactor wall 2 of thereactor 1. The first discharge portion 32 may include a first dischargehole 33 and a first discharge channel 34. The first discharge channel 34of the first discharge portion 32 is connected to the fifth region 14via the first discharge hole 33 penetrating through the first partition5.

An upper portion of the fifth region 14 may be coupled to a dischargepath cover 36, forming a discharge path. A sealing member such as anO-ring is inserted in a coupling surface between the fifth region 14 andthe discharge path cover 36, thereby isolating the discharge path fromthe external air. Furthermore, one surface of the discharge path cover36 may include a gas outlet 35. The gas outlet 35 may be connected to adischarge pump (not shown) to discharge the gas.

An upper portion of the fourth region 13 of the reactor 1 may be coupledto an upper cover 37 for safety. The upper cover 37 may protect an RFdistribution plate 39 from the outside.

FIG. 13 is a cross-sectional view of the reactor 1 viewed in a differentdirection. Referring to FIG. 13, in addition to the gas supply channel28 of FIG. 12, at least one sixth through-hole 43 connected to thesecond region 4 by penetrating through another surface of the firstpartition 5 may be formed in the first partition 5 of the reactor 1. Thesixth through-hole 43 may be arranged between the second partition 6 andthe third partition 7.

A coupling member 40 may be inserted in the sixth through-hole 43, andthus the gas channel 21 and the first partition 5 may be mechanicallycoupled to each other by the coupling member 40. The back plate 20 mayinclude a hole in one surface thereof, through which the coupling member40 passes. The back plate 20 with the gas channel 21 may be mechanicallycoupled to the first partition 5. The coupling member 40 may be aconductive body and may be a screw.

A support member 41 is inserted around the coupling member 40, and thesupport member 41 is formed of an insulating body. Accordingly, thecoupling member 40 and the first partition 5 may be electricallyinsulated from each other by the support member 41, and thus the leakageof plasma power during the plasma process may be prevented.

The gas channel 21 and the gas supply plate 22 may be formed of aconductive body. Accordingly, the gas channel 21 and the gas supplyplate 22 may serve as an electrode to transfer the plasma power duringthe plasma process plasma.

The flange 27, the back plate 20, and the support member 41 may beformed of an insulating body. Accordingly, the plasma power may beprevented from being leaked through the reactor wall 2 via the firstpartition 5. Furthermore, by filling the first through-hole 9 and thesixth region 17 around the flange 27 with the external air, generationof parasitic plasma in the space may be prevented.

The gas channel 21 and the gas supply plate 22 arranged in a lowerregion (the second region 4) may be coupled to each other by a separatecoupling member 42. The coupling member 42 may be formed of a conductivebody and may be a screw. In some embodiments, the gas channel 21 and thegas supply plate 22 included in gas supply unit may be integrallyformed.

FIG. 14 is an enlarged cross-sectional view of a discharge portion ofthe substrate processing apparatus. Referring to FIG. 14, the dischargeportion may include the first discharge portion 2 and a second dischargeportion 44. The first discharge portion 32 may include the firstdischarge hole 33 and the first discharge channel 34. The seconddischarge portion 44 may include a second discharge hole 45 and a seconddischarge channel 46. The first and second discharge holes 33 and 45 maypenetrate through the first partition 5. Furthermore, the first andsecond discharge holes 33 and 45 may connect the discharge path, thatis, the fifth region 14, and the discharge channels 34 and 46.

In the reaction space 18, the residual gas left after a chemicalreaction with the substrate is discharged through the first and seconddischarge portions 32 and 44. Most residual gas may flow to a region “A”via a discharge gap 48. Then, the residual gas in the region “A” maypass through the first discharge portion 32 and may be discharged to thefifth region 14 that is a discharge path.

The gas confined to a region “B” that is a blind spot next to the gaschannel and the gas supply plate may be discharged to the fifth region14 that is a discharge path through the second discharge portion 44. Thediameters of the first discharge hole 33 and the second discharge hole45 may be identical to or different from the diameters of the firstdischarge channel 34 and the second discharge channel 46, respectively.By appropriately adjusting the ratio of the diameters of the firstdischarge hole 33, the second discharge hole 45, the first dischargechannel 34, and/or second discharge channel 46, discharge efficiency ataround the edge portion of the substrate may be controlled and theuniformity of a film may be adjusted accordingly. Furthermore, byadjusting the size of the discharge gap 48, the discharge efficiency andthe uniformity of a film may be controlled.

FIGS. 15 to 17 are schematic perspective views of reactors according toother embodiments and substrate processing apparatuses including thereactors. The substrate processing apparatus according to the presentembodiment may be modified examples of the substrate processingapparatuses according to the above-described embodiments. Redundantdescriptions between the embodiments are omitted in the followingdescription.

Referring to FIG. 15, the reactor according to the present embodimentmay further include a protection cover 50, in addition to the first gasinlet 26, the gas outlet 35, and the discharge path cover 36. Theprotection cover 50 is a protection cover to protect an RF deliveryplate 52.

FIGS. 16 and 17 illustrate that the protection cover 50 is removed.Referring to FIGS. 16 and 17, the RF delivery plate 52 is connected tothe RF distribution plate 39. The RF distribution plate 39 iselectrically connected to a plurality of RF rods 54. In an embodiment,for the uniform supply of RF power, the RF rods 54 may be symmetricallyarranged with respect to the center of the gas channel 21, for example,the center of the first gas inlet 26.

An upper portion of the RF delivery plate 52 may be connected to an RFgenerator (not shown). A lower portion of the RF delivery plate 52 maybe connected to the RF distribution plate 39. The RF distribution plate39 may be connected to the RF rods 54.

Accordingly, the RF power generated by the RF generator is delivered tothe gas channel 21 via the RF delivery plate 52, the RF distributionplate 39, and the RF rods 54. The gas channel 21 is mechanicallyconnected to the gas supply plate 22, and the gas channel 21 and the gassupply plate 22 altogether may serve as RF electrodes.

At least one of the RF rods 54 may be installed in the reactor. The RFrods 54 may be arranged to penetrate through a portion of the firstpartition 5 of FIG. 12 arranged between the second partition 6 of FIG.12 and the third partition 7 of FIG. 12. In an additional embodiment, asillustrated in FIG. 17, at least two of the RF rods 54 may be arranged,and the RF rods 54 may be symmetrically arranged with respect to thecenter of the reactor. The symmetric arrangement may enable the RF powerto be uniformly supplied to the RF electrodes 21 and 22.

In some embodiments, a cartridge heater (not shown) may be installedabove the reactor wall 2 to heat the reactor wall. A plurality ofcartridge heaters may be symmetrically arranged, and thus a uniformtemperature gradation of the reactor wall 2 may be achieved.

FIGS. 18 and 19 schematically illustrate structures of reactorsaccording to other embodiments. The reactors according to the presentembodiments may be a perspective view (FIG. 18) and a bottom view (FIG.19) of the back plate 20 according to the above-described embodiments.

Referring to FIGS. 18 and 19, the second partition 6 may be arrangedspaced apart a certain distance from the center of the upper space ofthe reactor wall 2. The third partition 7 may be arranged between thesidewall of the reactor wall 2 and the second partition 6. The gassupply channel 28 of FIG. 12 extending from the upper space to the lowerspace may be provided by the structure of the second partition 6.

The fourth partition 19 may contact an upper surface of the back plate20 of FIG. 12 to support the back plate 20.

The coupling member 40 and the support member 41 may be inserted in ascrew hole 56. Accordingly, the gas channel 21 of FIG. 12 and the backplate 20 of FIG. 12 may be mechanically connected to the first partition5 of FIG. 12.

The RF rods 54 are inserted in a plurality of RF rod holes 58 andelectrically connected to the gas channel 21.

A discharge path is formed in the fifth region 14, and the firstdischarge hole 33 and the second discharge hole 45 may be respectivelyconnected to the first discharge channel 34 of FIG. 14 and the seconddischarge channel 46 of FIG. 14, forming a discharge portion.

The width of the first through-hole 9 may gradually increase toward thesixth region 17 of FIG. 12. The space of the sixth region 17 may befilled with the external air and may serve as an insulating body duringthe plasma process. Accordingly, the generation of parasitic plasma inthe space formed by the first through-hole 9 may be prevented.

FIGS. 20 and 21 schematically illustrate structures of the back plates20 according to other embodiments. The reactors (=back plates?)according to the present embodiments may be a perspective view (FIG. 20)and a bottom view (FIG. 21) of the back plate 20 according to theabove-described embodiments.

The back plate 20 is located between the first partition 5 of FIG. 12and the gas channel 21 of FIG. 12. Furthermore, the back plate 20 formedof an insulating body may serve as an insulator to isolate the firstpartition 5 of FIG. 12 from the gas channel 21 and the gas supply plate22, which are the RF electrodes, during the plasma process.

The fourth through-holes 11 may be plurally formed spaced apart acertain distance from the center of the back plate 20 in upper/lowersurface of the back plate 20. The fourth through-holes 11 may receive agas from the second through-hole 10 of FIG. 12 and supply the gas to thefifth through-hole 12 of FIG. 12 penetrating through the gas channel 21of FIG. 12. The third through-hole 23 is located at a center portion ofthe back plate 20, and the flange 27 of FIG. 12 is inserted in the thirdthrough-hole 23.

FIGS. 22 to 24 are, respectively, a perspective view, a top view, and abottom view of the gas channel 21 included in the gas supply unit,according to an embodiment.

The gas channel 21 may include a plurality of fifth through-holes 12arranged spaced apart a certain distance from the center portion of thegas channel 21.

Referring to FIG. 23, the positions of the fifth through-holes 12 in theupper surface of the gas channel 21 may correspond to the positions ofthe fourth through-holes 11 of the back plate 20 illustrated in FIGS. 20and 21.

The fifth through-holes 12 formed in the gas channel 21 may penetratethrough the gas channel 21 in a perpendicular direction or in aninclined direction.

For example, referring to FIG. 23, the fifth through-holes 12 may bearranged or formed along a first circumference having a first diameter don a first surface of the gas channel 21. Furthermore, referring to FIG.24, the fifth through-holes 12 may be arranged or formed along a secondcircumference having a second diameter d′ on a second surface of the gaschannel 21. In an example, the first diameter d may be greater than thesecond diameter d′. However, the present inventive concept is notlimited thereto, and it may be that d=d′ or d≠d′.

FIG. 25 illustrate various embodiments of the fourth through-hole 11 andthe fifth through-hole 12 penetrating through the back plate 20 and thegas channel 21.

As illustrated in FIG. 25, the fifth through-hole 12 penetrating throughthe gas channel 21 may penetrate through the gas supply plate 22 in aperpendicular direction or an inclined direction. When the fifththrough-hole 12 penetrates through the gas supply plate 22 in aninclined direction, the fifth through-hole 12 may lead toward the insideof the gas flow channel 24 or the outside thereof. Although it is notillustrated, the fourth through-hole 11 is not limited to the shape thatextends vertically.

FIG. 26 illustrates that the second through-hole 10, the fourththrough-hole 11, and the fifth through-hole 12 penetrate through thethird partition 7, the first partition 5, the back plate 20, and the gaschannel 21, according to another embodiment.

As illustrated in FIG. 26, each of the second gas inlet 31, the secondthrough-hole 10, the buffer space 38, the fourth through-hole 11, andthe fifth through-hole 12 is plurally provided and a plurality of gasesare supplied to the gas flow channel 24 via the second gas inlets 31.For example, the source gas, the reactive gas, and the purge gas may besupplied through the respective inlets.

The gas supplied to the gas flow channel 24 via the second through-hole10, the fourth through-hole 11, and the fifth through-hole 12 may besupplied to an edge region of the reaction space 18 via an edge portionunder the gas supply plate 22, or to a region between the center portionand the edge portion of the reaction space 18. As a result, theuniformity or characteristics of a film formed in an edge region (edgeportion) of the substrate to be processed or in a specific peripheralportion between the center portion and the edge region of the substratemay be selectively controlled.

For example, the uniformity of a film deposited in the edge region ofthe substrate or in a region between the center portion and the edgeportion of the substrate may be selectively controlled according to aflow rate of the gas supplied through the second, fourth, and fifththrough-holes 10, 11, and 12, and a degree of inclination of the fifththrough-hole 12 penetrating through the gas channel 21. Furthermore, dueto these factors, a uniformity deviation from a film deposited at thecenter portion of the substrate may be reduced or controlled.

For example, a film having a minimum uniformity deviation between thecenter portion and the edge portion of the substrate may be deposited.In another example, a film having a concave shape, in which the edgeportion of the substrate is thicker than the center portion thereof, maybe deposited, or a film having a convex shape, in which the centerportion of the substrate is thicker than the edge portion thereof, maybe deposited. The gas supplied through the second through-hole 10, thefourth through-hole 11, and the fifth through-hole 12 may be an inertgas. In some embodiments, the gas may be the reactive gas and/or thesource gas participating in the formation of a film.

FIGS. 27 and 28 are graphs showing a thickness of a SiO2 film depositedon a substrate by a plasma-enhanced atomic layer deposition (PEALD)method in a reactor according to an embodiment. The graphs show theeffect of the gas supplied through the second through-hole 10, thefourth through-hole 11, and the fifth through-hole 12 on the uniformityof a film, in particular, the uniformity of a film deposited at the edgeportion of the substrate.

The horizontal axis of the graphs denotes a distance of 150 mm to theleft and right from the center of the wafer when the diameter of thesubstrate is 300 mm. The vertical axis of the graphs denotes thethickness of a film. In the present embodiment, the effect is evaluatedby setting the angle of the fifth through-hole 12 penetrating throughthe gas channel 21 to 30° and varying a gas flow rate.

TABLE 1 1st through-hole 2nd thru-hole Source Purge Edge RF carrier ArAr O2 gas power Pressure (sccm) (sccm) (sccm) (sccm) (W) (Torr) 10003500 200 Ar 0~1000 400 2 1000 3500 200 O2 0~500  400 2

As shown in Table 1, through the first through-hole (main hole) that isthe gas supply channel, Ar of 1000 sccm was supplied as a source carrierand Ar of 3500 sccm was supplied as a purge gas, and O2 of 200 sccm maybe supplied as a reactive gas continuously for an entire process period(Accordingly, a total flow rate is 4,700 sccm). Plasma of 400 watt wassupplied and a pressure of 2 torr was maintained in a reaction spaceduring the process.

Oxygen was activated only when plasma is supplied and reacted withsource molecules on the substrate. Accordingly, the oxygen serves as apurge gas when plasma is not supplied. Accordingly, oxygen may serve asa reactive purge gas in the present process.

The gas supplied through the second through-hole may be Ar or O2. Thegas may be continuously supplied for the entire process period. The flowrate of the gas may be appropriately controlled according to a desiredfilm uniformity around the substrate.

The inventive concept according to the above-described embodiments canbe summarized as follows.

-   -   First operation of continuously supplying a source gas, a purge        gas, and a reactive purge gas through a first through-hole    -   Second operation of continuously supplying at least one of the        purge gas and the reactive purge gas through a second        through-hole    -   Third operation of applying plasma    -   The first operation and the second operation may be        simultaneously performed, whereas the third operation may be        temporarily performed while the first operation and the second        operation are performed.

The first through-hole corresponds to the gas supply channel 28 of FIG.12, and the second through-hole corresponds to the through-holes 10, 11,and 12 of FIG. 12 penetrating through at least part of the gas supplyunit.

As illustrated in FIG. 27, it may be seen that, as the flow rate of theAr gas supplied through the second through-hole increases, the thicknessof the film deposited at the edge portion of the substrate decreases.Also, as illustrated in FIG. 28, it may be seen that, as the flow rateof the oxygen gas supplied through the second through-hole increases,the thickness of the film deposited at the edge portion of the substrateincreases. In other words, by inducing and controlling a blocking effecton a peripheral portion of the substrate with respect to the source gasand the reactive gas supplied to a peripheral portion of the reactionspace, uniformity of a film on the substrate may be controlled.

The embodiment of the present inventive concept may not be construed tobe limited to a particular shape of a part described in the presentspecification and may include a change in the shape generated duringmanufacturing, for example.

It should be understood that embodiments described herein should beconsidered in a descriptive sense only and not for purposes oflimitation. Descriptions of features or aspects within each embodimentshould typically be considered as available for other similar featuresor aspects in other embodiments.

While one or more embodiments have been described with reference to thefigures, it will be understood by those of ordinary skill in the artthat various changes in form and details may be made therein withoutdeparting from the spirit and scope as defined by the following claims.

What is claimed is:
 1. A substrate processing apparatus comprising: abody portion comprising a discharge path; a gas supply unit connected tothe body portion; a first partition extending from the body portion; asecond partition extending from the body portion and arranged betweenthe gas supply unit and the first partition; and a substrate supportunit configured to have surface-sealing with the first partition,wherein the second partition is configured to maintain a non-contactstate with the substrate support unit when the substrate support unitsurface-seals with the first partition, wherein a first region betweenthe first partition and the second partition and a second region betweenthe gas supply unit and the second partition are connected to thedischarge path, wherein the body portion further comprises: a firstupward discharge channel extending between the first partition and thesecond partition, the first upward discharge channel connecting thefirst region between the first partition and the second partition andthe discharge path above the gas supply unit; and a second upwarddischarge channel extending between the gas supply unit and the secondpartition, the second upward discharge channel connecting the secondregion between the gas supply unit and the second partition and thedischarge path above the gas supply unit, wherein both of the firstupward discharge channel and the second upward discharge channel aredisposed above the substrate support unit, and wherein the secondpartition is fixed to the body portion and extends between the firstupward discharge channel and the second upward discharge channel.
 2. Thesubstrate processing apparatus of claim 1, wherein a first gap is formedbetween the second partition and the substrate support unit when thesecond partition is maintained in the non-contact state with thesubstrate support unit, wherein a second gap is formed between thesecond partition and the gas supply unit, wherein a gas in the first gapis upwardly discharged through the first upward discharge channel, andwherein a gas in the second gap is upwardly discharged through thesecond upward discharge channel.
 3. The substrate processing apparatusof claim 1, wherein the first partition protrudes from the body portionthrough the substrate support unit, and wherein the second partitionprotrudes from the body portion toward the substrate support unit. 4.The substrate processing apparatus of claim 1, further comprising aninsulating plate arranged on the gas supply unit, wherein the secondregion is communicated with the second upward discharge channel via aspace between the insulating plate and the body portion.
 5. Thesubstrate processing apparatus of claim 4, wherein the second upwarddischarge channel is formed around an edge of the insulating plate. 6.The substrate processing apparatus of claim 5, wherein the edge of theinsulating plate includes a recessed surface, and the second region iscommunicated with the second upward discharge channel via a spacebetween the recessed surface and the body portion.
 7. The substrateprocessing apparatus of claim 1, wherein a direction of a path from thesecond region to the second upward discharge channel is changed at leasttwo times.
 8. The substrate processing apparatus of claim 1, furthercomprising a controller that is configured to perform a cycle at leastonce, the cycle comprising a first step of supplying a first gas and asecond step of supplying a second gas.
 9. The substrate processingapparatus of claim 1, further comprising a controller that is configuredto perform a cycle a plurality of times, the cycle comprising a firststep of supplying a source gas, a second step of purging the source gas,a third step of supplying a reactive gas, and a fourth step of purgingthe reactive gas.
 10. The substrate processing apparatus of claim 9,wherein each of the source gas and the reactive gas is distributed anddischarged through the first region and the second region.
 11. Thesubstrate processing apparatus of claim 10, wherein the source gas andthe reactive gas are supplied by the gas supply unit, and a changingcycle for supplying the source gas and the reactive gas is determinedbased on a position of the second partition arranged between the gassupply unit and the first partition.
 12. The substrate processingapparatus of claim 9, wherein, during a time section of at least part ofthe first step to the fourth step, a flow rate of a gas escaping fromthe first region through the first upward discharge channel is less thana flow rate of a gas escaping from the second region through the secondupward discharge channel.
 13. The substrate processing apparatus ofclaim 9, wherein, during a time section of at least part of the firststep to the fourth step, a flow rate of a gas escaping from the firstregion through the first upward discharge channel is greater than a flowrate of a gas escaping from the second region through the second upwarddischarge channel.
 14. The substrate processing apparatus of claim 9,wherein, during a time section of at least part of the first step to thefourth step, a flow rate of a gas supplied by the gas supply unit issubstantially the same as a sum of a flow rate of the gas escaping fromthe first region through the first upward discharge channel and a flowrate of the gas escaping from the second region through the secondupward discharge channel.
 15. The substrate processing apparatus ofclaim 1, wherein a reaction space is defined by the gas supply unit, thesubstrate support unit, and the second partition.
 16. The substrateprocessing apparatus of claim 1, wherein at least part of the dischargepath overlaps the gas supply unit in an extended vertical direction. 17.A substrate processing apparatus comprising: a first partition; a gassupply unit connected to the first partition; a substrate support unitconfigured to have surface-sealing with the first partition; a secondpartition dividing a space between the first partition and the gassupply unit into a first region and a second region; a discharge pathabove the gas supply unit, the discharge path being communicated withthe first region and the second region; a first upward discharge channelbetween the first partition and the second partition, the first upwarddischarge channel connecting the first region and the discharge path;and a second upward discharge channel between the gas supply unit andthe second partition, the second upward discharge channel connecting thesecond region and the discharge path, wherein the second partition isconfigured to maintain a non-contact state with the substrate supportunit when the substrate support unit surface-seals with the firstpartition, wherein both of the first upward discharge channel and thesecond upward discharge channel are disposed above the substrate supportunit, wherein a first gap is formed between the second partition and thesubstrate support unit when the second partition is maintained in thenon-contact state with the substrate support unit, wherein a second gapis formed between the second partition and the gas supply unit, whereina gas in the first gap is upwardly discharged through the first upwarddischarge channel, and wherein a gas in the second gap is upwardlydischarged through the second upward discharge channel.
 18. Thesubstrate processing apparatus of claim 17, wherein the first partitionprotrudes from a body portion toward the substrate support unit, andwherein the second partition protrudes from the body portion toward thesubstrate support unit.
 19. The substrate processing apparatus of claim18, wherein the second partition is fixed to the body portion.